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Products
InP-based EPI wafers
Parameter DFB EPI wafer High-power DFB EPI wafer Silicon Photo EPI Wafer
Rate 10G/25G/50G
Wavelength 1310nm 1310nm 1310nm
Size 2inch/3inch 2inch/3inch 2inch/3inch
Feature CWDM 4/PAM 4 BH process, BH process containing Al PQ DFB, including Al DFB
Description EPIHOUSE data center epitaxial wafers are mainly based on InP and GaAs substrate. The epitaxial wafers of basing on InP substrates are mainly edge-emitting DFB/EML lasers and silicon optical epitaxial wafers, with the rate exceeding 25Gb/s and wavelengths of 1270nm, 1310nm, 1330nm, etc., satisfying the transmission requirements of 100G/400G/800G optical modules.
GaAs-based EPI wafers
Parameter VCSEL EPI wafer GaAs PD EPI wafer
Rate 25G/50G 10G/25G/50G
Wavelength 850nm
Size 4inch/6inch 3inch/4inch/6inch
Description EPIHOUSE data center epitaxial wafers are mainly based on InP and GaAs substrate. The epitaxial wafers are grown on GaAs substrates are mainly vertical cavity surface emitting lasers (VCSEL) and GaAs-based PD, with the wavelength of 850nm and a modulation rate higher than 50Gb/s, meeting the needs of short-distance data transmission in data centers.


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